IGZ100N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 161A TO247-4
$8.07
Available to order
Reference Price (USD)
1+
$7.86000
10+
$7.15200
240+
$6.01663
720+
$5.31092
1,200+
$4.69728
Exquisite packaging
Discount
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Enhance your electronic projects with the IGZ100N65H5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IGZ100N65H5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IGZ100N65H5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 161 A
- Current - Collector Pulsed (Icm): 400 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Power - Max: 536 W
- Switching Energy: 850µJ (on), 770µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 30ns/421ns
- Test Condition: 400V, 50A, 8Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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