FGD3N60LSDTM
onsemi
onsemi
IGBT 600V 6A 40W DPAK
$1.36
Available to order
Reference Price (USD)
2,500+
$0.53960
5,000+
$0.51539
Exquisite packaging
Discount
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Upgrade your power management systems with the FGD3N60LSDTM Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGD3N60LSDTM provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGD3N60LSDTM for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 25 A
- Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
- Power - Max: 40 W
- Switching Energy: 250µJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 12.5 nC
- Td (on/off) @ 25°C: 40ns/600ns
- Test Condition: 480V, 3A, 470Ohm, 10V
- Reverse Recovery Time (trr): 234 ns
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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