FGH75T65UPD
onsemi
onsemi
IGBT 650V 150A 375W TO-247AB
$4.25
Available to order
Reference Price (USD)
450+
$4.19751
Exquisite packaging
Discount
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Optimize your power systems with the FGH75T65UPD Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGH75T65UPD delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Power - Max: 375 W
- Switching Energy: 2.85mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 385 nC
- Td (on/off) @ 25°C: 32ns/166ns
- Test Condition: 400V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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