IXYX100N120B3
IXYS
IXYS
IGBT 1200V 188A 1150W PLUS247
$24.43
Available to order
Reference Price (USD)
1+
$20.72000
10+
$18.83700
30+
$17.42433
120+
$16.01142
270+
$14.59867
510+
$13.65682
Exquisite packaging
Discount
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Enhance your electronic projects with the IXYX100N120B3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXYX100N120B3 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXYX100N120B3 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 225 A
- Current - Collector Pulsed (Icm): 530 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
- Power - Max: 1150 W
- Switching Energy: 7.7mJ (on), 7.1mJ (off)
- Input Type: Standard
- Gate Charge: 250 nC
- Td (on/off) @ 25°C: 30ns/153ns
- Test Condition: 600V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PLUS247™-3
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