IKW20N65ET7XKSA1
Infineon Technologies
Infineon Technologies
IKW20N65ET7XKSA1
$3.55
Available to order
Reference Price (USD)
1+
$3.55000
500+
$3.5145
1000+
$3.479
1500+
$3.4435
2000+
$3.408
2500+
$3.3725
Exquisite packaging
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The IKW20N65ET7XKSA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IKW20N65ET7XKSA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
- Power - Max: 136 W
- Switching Energy: 360µJ (on), 360µJ (off)
- Input Type: Standard
- Gate Charge: 128 nC
- Td (on/off) @ 25°C: 16ns/210ns
- Test Condition: 400V, 20A, 12Ohm, 15V
- Reverse Recovery Time (trr): 70 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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