RGT30NS65DGTL
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 30A 133W TO-263S
$2.35
Available to order
Reference Price (USD)
1,000+
$0.90625
2,000+
$0.87500
Exquisite packaging
Discount
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The RGT30NS65DGTL Single IGBT transistor by Rohm Semiconductor is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RGT30NS65DGTL provides consistent performance in varied conditions. Rely on Rohm Semiconductor's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 133 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 18ns/64ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
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