NGTB30N120FL2WG
onsemi
onsemi
IGBT TRENCH/FS 1200V 60A TO247
$4.78
Available to order
Reference Price (USD)
1+
$9.41000
30+
$7.71200
120+
$6.95967
510+
$5.83110
1,020+
$5.07870
Exquisite packaging
Discount
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The NGTB30N120FL2WG Single IGBT transistor by onsemi is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the NGTB30N120FL2WG provides consistent performance in varied conditions. Rely on onsemi's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
- Power - Max: 452 W
- Switching Energy: 2.6mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 220 nC
- Td (on/off) @ 25°C: 98ns/210ns
- Test Condition: 600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 240 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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