RGCL60TS60DGC13
Rohm Semiconductor
Rohm Semiconductor
LOW VCE(SAT) TYPE, 600V 30A, FRD
$6.25
Available to order
Reference Price (USD)
1+
$6.25000
500+
$6.1875
1000+
$6.125
1500+
$6.0625
2000+
$6
2500+
$5.9375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RGCL60TS60DGC13 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGCL60TS60DGC13 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGCL60TS60DGC13 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 48 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
- Power - Max: 111 W
- Switching Energy: 770µJ (on), 1.11mJ (off)
- Input Type: Standard
- Gate Charge: 68 nC
- Td (on/off) @ 25°C: 44ns/186ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
Related Products
IXYS
IXYH40N65C3D1
IXYS
IXYA20N120C4HV
Alpha & Omega Semiconductor Inc.
AOK50B65H1
Renesas Electronics America Inc
RJP6065DPM-00#T1
STMicroelectronics
STGWA40S120DF3
Renesas Electronics America Inc
RJH30E3DPK-M0#T2
IXYS
IXYH16N170C
Fairchild Semiconductor
SGP6N60UFDTU
onsemi
FGH75T65SQDNL4
Infineon Technologies