SGP6N60UFDTU
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$0.55
Available to order
Reference Price (USD)
1+
$0.55000
500+
$0.5445
1000+
$0.539
1500+
$0.5335
2000+
$0.528
2500+
$0.5225
Exquisite packaging
Discount
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Optimize your power systems with the SGP6N60UFDTU Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the SGP6N60UFDTU delivers consistent and reliable operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 6 A
- Current - Collector Pulsed (Icm): 25 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 3A
- Power - Max: 30 W
- Switching Energy: 57µJ (on), 25µJ (off)
- Input Type: Standard
- Gate Charge: 15 nC
- Td (on/off) @ 25°C: 15ns/60ns
- Test Condition: 300V, 3A, 80Ohm, 15V
- Reverse Recovery Time (trr): 52 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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