RGTVX2TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 60A FIELD STOP TRENCH IGBT
$8.05
Available to order
Reference Price (USD)
1+
$8.05000
500+
$7.9695
1000+
$7.889
1500+
$7.8085
2000+
$7.728
2500+
$7.6475
Exquisite packaging
Discount
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The RGTVX2TS65DGC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGTVX2TS65DGC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 111 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 60A
- Power - Max: 319 W
- Switching Energy: 2.08mJ (on), 1.15mJ (off)
- Input Type: Standard
- Gate Charge: 123 nC
- Td (on/off) @ 25°C: 49ns/150ns
- Test Condition: 400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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