RGW00TK65DGVC11
Rohm Semiconductor
Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$7.27
Available to order
Reference Price (USD)
1+
$6.36000
10+
$5.71200
25+
$5.40000
100+
$4.68000
450+
$4.44000
900+
$3.98400
1,350+
$3.36000
Exquisite packaging
Discount
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The RGW00TK65DGVC11 by Rohm Semiconductor is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RGW00TK65DGVC11 delivers robust performance. Rohm Semiconductor's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RGW00TK65DGVC11 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 89 W
- Switching Energy: 1.18mJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 52ns/180ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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