IXGT30N120B3D1
IXYS
IXYS
IGBT 1200V 300W TO268
$10.41
Available to order
Reference Price (USD)
30+
$6.67267
Exquisite packaging
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The IXGT30N120B3D1 by IXYS is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With IXYS's reputation for quality, the IXGT30N120B3D1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 3.47mJ (on), 2.16mJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 16ns/127ns
- Test Condition: 960V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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