IKD10N60RC2ATMA1
Infineon Technologies
Infineon Technologies
IKD10N60RC2ATMA1
$1.55
Available to order
Reference Price (USD)
1+
$1.55000
500+
$1.5345
1000+
$1.519
1500+
$1.5035
2000+
$1.488
2500+
$1.4725
Exquisite packaging
Discount
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Enhance your electronic projects with the IKD10N60RC2ATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKD10N60RC2ATMA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKD10N60RC2ATMA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 18.8 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
- Power - Max: 79 W
- Switching Energy: 320µJ (on), 170µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 14ns/250ns
- Test Condition: 400V, 10A, 49Ohm, 15V
- Reverse Recovery Time (trr): 104 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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