IKW75N65RH5XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$11.75
Available to order
Reference Price (USD)
1+
$11.75000
500+
$11.6325
1000+
$11.515
1500+
$11.3975
2000+
$11.28
2500+
$11.1625
Exquisite packaging
Discount
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Enhance your electronic projects with the IKW75N65RH5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKW75N65RH5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKW75N65RH5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 360µJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 26ns/180ns
- Test Condition: 400V, 37.5A, 9Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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Infineon Technologies