NGTG35N65FL2WG
onsemi
onsemi
IGBT FIELD STOP 650V 70A TO247-3
$3.71
Available to order
Reference Price (USD)
1+
$4.31000
30+
$3.46500
120+
$3.15700
510+
$2.55639
1,020+
$2.15600
Exquisite packaging
Discount
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The NGTG35N65FL2WG Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The NGTG35N65FL2WG ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate NGTG35N65FL2WG into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Power - Max: 300 W
- Switching Energy: 840µJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 72ns/132ns
- Test Condition: 400V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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