NGTB40N60L2WG
onsemi
onsemi
IGBT TRENCH/FS 600V 80A TO247
$6.02
Available to order
Reference Price (USD)
1+
$6.32000
30+
$5.36300
120+
$4.64783
510+
$3.95661
1,020+
$3.33690
Exquisite packaging
Discount
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Optimize your power systems with the NGTB40N60L2WG Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the NGTB40N60L2WG delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.61V @ 15V, 40A
- Power - Max: 417 W
- Switching Energy: 1.17mJ (on), 280µJ (off)
- Input Type: Standard
- Gate Charge: 228 nC
- Td (on/off) @ 25°C: 98ns/213ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 73 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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