RGWS80TS65DGC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.52
Available to order
Reference Price (USD)
1+
$6.52000
500+
$6.4548
1000+
$6.3896
1500+
$6.3244
2000+
$6.2592
2500+
$6.194
Exquisite packaging
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Enhance your electronic projects with the RGWS80TS65DGC13 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGWS80TS65DGC13 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGWS80TS65DGC13 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 71 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 202 W
- Switching Energy: 700µJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 83 nC
- Td (on/off) @ 25°C: 40ns/114ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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