FGL35N120FTDTU
onsemi
onsemi
IGBT TRENCH/FS 1200V 70A TO264-3
$5.60
Available to order
Reference Price (USD)
1+
$10.36000
10+
$9.39000
375+
$7.50000
750+
$6.87000
1,125+
$6.03000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FGL35N120FTDTU Single IGBT transistor from onsemi. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGL35N120FTDTU ensures precision and reliability. onsemi's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGL35N120FTDTU for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 105 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
- Power - Max: 368 W
- Switching Energy: 2.5mJ (on), 1.7mJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 34ns/172ns
- Test Condition: 600V, 35A, 10Ohm, 15V
- Reverse Recovery Time (trr): 337 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264-3
Related Products
STMicroelectronics
STGWA45HF60WDI
Infineon Technologies
IKD04N60RC2ATMA1
Renesas Electronics America Inc
RJP30H1DPP-MZ#T2
onsemi
FGH60N60SMD
Rohm Semiconductor
RGPR10BM40FHTL
IXYS
IXGH2N250
STMicroelectronics
STGF15H60DF
Fairchild Semiconductor
ISL9V2540S3ST
Fairchild Semiconductor
HGT1S20N36G3VLS
Infineon Technologies