FMM6G30US60
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$26.00
Available to order
Reference Price (USD)
1+
$26.00000
500+
$25.74
1000+
$25.48
1500+
$25.22
2000+
$24.96
2500+
$24.7
Exquisite packaging
Discount
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Optimize your power systems with Fairchild Semiconductor's FMM6G30US60, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FMM6G30US60 is particularly effective in high-ambient-temperature environments like steel mill drives. Fairchild Semiconductor brings decades of semiconductor expertise to every FMM6G30US60 module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 30 A
- Power - Max: 104 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 2.1 nF @ 30 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: -
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