NXH50M65L4Q1PTG
onsemi
onsemi
6KW H6.5 50A Q1PACK PRESS-FIT PI
$58.58
Available to order
Reference Price (USD)
1+
$58.58429
500+
$57.9984471
1000+
$57.4126042
1500+
$56.8267613
2000+
$56.2409184
2500+
$55.6550755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with onsemi's NXH50M65L4Q1PTG, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The NXH50M65L4Q1PTG is particularly effective in high-ambient-temperature environments like steel mill drives. onsemi brings decades of semiconductor expertise to every NXH50M65L4Q1PTG module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 48 A
- Power - Max: 86 W
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 27-PIM (71x37.4)
Related Products
Infineon Technologies
FS100R17N3E4PB11BPSA1
Microchip Technology
APTGT400U120D4G
Infineon Technologies
BSM200GB120DN2HOSA1
Vishay General Semiconductor - Diodes Division
VS-GT75YF120NT
Infineon Technologies
IM241S6S1JAUMA1
Infineon Technologies
FS200R12KT4RPB51BPSA1
Infineon Technologies
FF400R12KE3S5HOSA1
IXYS
MID200-12A4
Infineon Technologies
FF400R12KT3EHOSA1
IXYS