VS-GT75YF120NT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
ECONO - 4 PACK IGBT
$139.98
Available to order
Reference Price (USD)
1+
$139.98000
500+
$138.5802
1000+
$137.1804
1500+
$135.7806
2000+
$134.3808
2500+
$132.981
Exquisite packaging
Discount
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Engineered for excellence, the VS-GT75YF120NT IGBT module by Vishay General Semiconductor - Diodes Division sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The VS-GT75YF120NT finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Vishay General Semiconductor - Diodes Division continues to lead the IGBT module revolution with innovations like the VS-GT75YF120NT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 118 A
- Power - Max: 431 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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