MID200-12A4
IXYS
IXYS
IGBT MOD 1200V 270A 1130W Y3DCB
$131.33
Available to order
Reference Price (USD)
2+
$103.20000
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's MID200-12A4 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MID200-12A4 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MID200-12A4 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MID200-12A4 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 270 A
- Power - Max: 1130 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
- Current - Collector Cutoff (Max): 10 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-DCB
- Supplier Device Package: Y3-DCB
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