FPF2G120BF07ASP
onsemi
onsemi
IGBT MODULE 650V 40A 156W F2
$94.00
Available to order
Reference Price (USD)
1+
$109.28000
Exquisite packaging
Discount
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onsemi's FPF2G120BF07ASP stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FPF2G120BF07ASP enables higher power density in MRI gradient amplifiers. Choose onsemi for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Configuration: 3 Independent
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 156 W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: F2
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