IFS100B17N3E4PB11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 150A 600W
$171.20
Available to order
Reference Price (USD)
6+
$186.06000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's IFS100B17N3E4PB11BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the IFS100B17N3E4PB11BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 600 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
IXYS
MUBW35-12A7
IXYS
MIXA80WB1200TEH
Infineon Technologies
FP50R12KT4BPSA1
Infineon Technologies
FP10R12YT3B4BOMA1
Microchip Technology
APTGT300SK60G
Infineon Technologies
BSM300GA120DLCSHOSA1
IXYS
MID300-12A4
Infineon Technologies
FP25R12KT4B16BOSA1
Infineon Technologies
DF450R12N2E4PB11BPSA1
onsemi