FZ1200R45HL3S7BPSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K AG-IHVB19
$3,272.88
Available to order
Reference Price (USD)
1+
$3272.88000
500+
$3240.1512
1000+
$3207.4224
1500+
$3174.6936
2000+
$3141.9648
2500+
$3109.236
Exquisite packaging
Discount
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Discover the power of Infineon Technologies's FZ1200R45HL3S7BPSA1, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The FZ1200R45HL3S7BPSA1 performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's FZ1200R45HL3S7BPSA1, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 5900 V
- Current - Collector (Ic) (Max): 1200 A
- Power - Max: 2.4 MW
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1.2kA
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHVB190
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