MDI75-12A3
IXYS
IXYS
IGBT MODULE 1200V 90A 370W Y4M5
$60.26
Available to order
Reference Price (USD)
6+
$49.69167
Exquisite packaging
Discount
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Optimize your power systems with IXYS's MDI75-12A3, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The MDI75-12A3 is particularly effective in high-ambient-temperature environments like steel mill drives. IXYS brings decades of semiconductor expertise to every MDI75-12A3 module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 370 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M5
- Supplier Device Package: Y4-M5
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