BSM200GB120DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 290A 1400W
$317.40
Available to order
Reference Price (USD)
10+
$178.73700
Exquisite packaging
Discount
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Infineon Technologies's BSM200GB120DN2HOSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the BSM200GB120DN2HOSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 290 A
- Power - Max: 1400 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 200A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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