FS100R17N3E4PB11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE LOW POWER ECONO
$274.52
Available to order
Reference Price (USD)
6+
$172.93833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS100R17N3E4PB11BPSA1 sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the FS100R17N3E4PB11BPSA1 in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Infineon Technologies to deliver cutting-edge IGBT solutions with the FS100R17N3E4PB11BPSA1 power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
APTGT400U120D4G
Infineon Technologies
BSM200GB120DN2HOSA1
Vishay General Semiconductor - Diodes Division
VS-GT75YF120NT
Infineon Technologies
IM241S6S1JAUMA1
Infineon Technologies
FS200R12KT4RPB51BPSA1
Infineon Technologies
FF400R12KE3S5HOSA1
IXYS
MID200-12A4
Infineon Technologies
FF400R12KT3EHOSA1
IXYS
MDI75-12A3
Infineon Technologies