FMMT5179TA
Diodes Incorporated
Diodes Incorporated
RF TRANS NPN 12V 2GHZ SOT23-3
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The FMMT5179TA RF Bipolar Junction Transistor (BJT) by Diodes Incorporated is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the FMMT5179TA is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Diodes Incorporated for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 2GHz
- Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
- Gain: 15dB
- Power - Max: 330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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