FMMT618QTA
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR SOT23 T&R
$0.17
Available to order
Reference Price (USD)
1+
$0.17317
500+
$0.1714383
1000+
$0.1697066
1500+
$0.1679749
2000+
$0.1662432
2500+
$0.1645115
Exquisite packaging
Discount
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Upgrade your electronic designs with the FMMT618QTA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the FMMT618QTA is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2.5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 50mA, 2.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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