FMMT718QTA
Diodes Incorporated
Diodes Incorporated
SS LOW SAT TRANSISTOR SOT23 T&R
$0.16
Available to order
Reference Price (USD)
1+
$0.15954
500+
$0.1579446
1000+
$0.1563492
1500+
$0.1547538
2000+
$0.1531584
2500+
$0.151563
Exquisite packaging
Discount
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Optimize your electronic systems with the FMMT718QTA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the FMMT718QTA delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
- Power - Max: 625 mW
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (Type DN)
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