FP15R12W1T7BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY1B-1
$42.49
Available to order
Reference Price (USD)
1+
$42.49000
500+
$42.0651
1000+
$41.6402
1500+
$41.2153
2000+
$40.7904
2500+
$40.3655
Exquisite packaging
Discount
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Optimize your power systems with Infineon Technologies's FP15R12W1T7BOMA1, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The FP15R12W1T7BOMA1 is particularly effective in high-ambient-temperature environments like steel mill drives. Infineon Technologies brings decades of semiconductor expertise to every FP15R12W1T7BOMA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 15 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): 3 µA
- Input Capacitance (Cies) @ Vce: 2.82 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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