FP35R12N2T7BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-711
$101.66
Available to order
Reference Price (USD)
1+
$101.66000
500+
$100.6434
1000+
$99.6268
1500+
$98.6102
2000+
$97.5936
2500+
$96.577
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's FP35R12N2T7BPSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FP35R12N2T7BPSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FP35R12N2T7BPSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FP35R12N2T7BPSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 35A
- Current - Collector Cutoff (Max): 7 µA
- Input Capacitance (Cies) @ Vce: 6.62 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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