NXH300B100H4Q2F2PG
onsemi
onsemi
MASS MARKET 250KW 1500V Q2 3 LEV
$146.56
Available to order
Reference Price (USD)
1+
$146.56000
500+
$145.0944
1000+
$143.6288
1500+
$142.1632
2000+
$140.6976
2500+
$139.232
Exquisite packaging
Discount
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The NXH300B100H4Q2F2PG by onsemi redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the NXH300B100H4Q2F2PG in high-efficiency servo controllers for manufacturing automation. onsemi combines innovation with quality in every NXH300B100H4Q2F2PG module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Dual, Common Source
- Voltage - Collector Emitter Breakdown (Max): 1118 V
- Current - Collector (Ic) (Max): 73 A
- Power - Max: 194 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 100A
- Current - Collector Cutoff (Max): 800 µA
- Input Capacitance (Cies) @ Vce: 6.323 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 53-PIM/Q2PACK (93x47)
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