BSM150GB120DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 210A 1250W
$267.92
Available to order
Reference Price (USD)
10+
$150.87800
Exquisite packaging
Discount
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The BSM150GB120DN2HOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the BSM150GB120DN2HOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every BSM150GB120DN2HOSA1 module.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 210 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 150A
- Current - Collector Cutoff (Max): 2.8 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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