MWI50-12A7T
IXYS
IXYS
IGBT MODULE 1200V 85A 350W E2
$127.69
Available to order
Reference Price (USD)
6+
$87.40833
Exquisite packaging
Discount
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Experience next-generation power control with IXYS's MWI50-12A7T IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MWI50-12A7T offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MWI50-12A7T in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MWI50-12A7T IGBT module.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 85 A
- Power - Max: 350 W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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