FF800R17KF6CB2NOSA2
Infineon Technologies
Infineon Technologies
IGBT MODULE A-IHM130-1
$1,198.31
Available to order
Reference Price (USD)
1+
$1198.31000
500+
$1186.3269
1000+
$1174.3438
1500+
$1162.3607
2000+
$1150.3776
2500+
$1138.3945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FF800R17KF6CB2NOSA2 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FF800R17KF6CB2NOSA2 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
FD1000R33HE3KB60BPSA1
Infineon Technologies
BSM200GB120DLCHOSA1
Infineon Technologies
BSM100GD120DN2BOSA1
Infineon Technologies
FF600R17KE3NOSA1
IXYS
MUBW50-17T8
Infineon Technologies
F4150R17ME4B11BPSA2
Infineon Technologies
FS100R12N2T4BDLA1
IXYS
IXGN50N120C3H1
Microchip Technology
APTCV40H60CT1G
Infineon Technologies