BSM300GB120DLCE3256HOSA1
Infineon Technologies
Infineon Technologies
BSM300GB120 - INSULATED GATE BIP
$208.00
Available to order
Reference Price (USD)
1+
$208.00000
500+
$205.92
1000+
$203.84
1500+
$201.76
2000+
$199.68
2500+
$197.6
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSM300GB120DLCE3256HOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the BSM300GB120DLCE3256HOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every BSM300GB120DLCE3256HOSA1 module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 625 A
- Power - Max: 2500 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FF800R17KF6CB2NOSA2
Infineon Technologies
FD1000R33HE3KB60BPSA1
Infineon Technologies
BSM200GB120DLCHOSA1
Infineon Technologies
BSM100GD120DN2BOSA1
Infineon Technologies
FF600R17KE3NOSA1
IXYS
MUBW50-17T8
Infineon Technologies
F4150R17ME4B11BPSA2
Infineon Technologies
FS100R12N2T4BDLA1
IXYS
IXGN50N120C3H1
Microchip Technology