FP75R07N2E4B11BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2B-411
$129.24
Available to order
Reference Price (USD)
1+
$129.24000
500+
$127.9476
1000+
$126.6552
1500+
$125.3628
2000+
$124.0704
2500+
$122.778
Exquisite packaging
Discount
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The FP75R07N2E4B11BPSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FP75R07N2E4B11BPSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every FP75R07N2E4B11BPSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 95 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
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