FP75R17N3E4PB21BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO3B-411
$256.30
Available to order
Reference Price (USD)
1+
$256.30000
500+
$253.737
1000+
$251.174
1500+
$248.611
2000+
$246.048
2500+
$243.485
Exquisite packaging
Discount
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Infineon Technologies's FP75R17N3E4PB21BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FP75R17N3E4PB21BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 125 A
- Power - Max: 555 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO3
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