NXH40B120MNQ1SNG
onsemi
onsemi
30KW Q1BOOST FULL SIC
$124.64
Available to order
Reference Price (USD)
1+
$124.64000
500+
$123.3936
1000+
$122.1472
1500+
$120.9008
2000+
$119.6544
2500+
$118.408
Exquisite packaging
Discount
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Discover the power of onsemi's NXH40B120MNQ1SNG, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The NXH40B120MNQ1SNG performs exceptionally well in high-voltage DC transmission and pulsed power applications. With onsemi's NXH40B120MNQ1SNG, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Triple, Dual - Common Source
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: 156 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 3.227 nF @ 800 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 32-PIM (71x37.4)
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