FQA6N70
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 700V 6.4A TO3P
$1.14
Available to order
Reference Price (USD)
1+
$1.14000
500+
$1.1286
1000+
$1.1172
1500+
$1.1058
2000+
$1.0944
2500+
$1.083
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the FQA6N70 by Fairchild Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FQA6N70 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Fairchild Semiconductor.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 152W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Vishay Siliconix
SI5448DU-T1-GE3
Vishay Siliconix
SI3464DV-T1-GE3
NXP USA Inc.
BUK7E4R0-80E,127
Nexperia USA Inc.
PXN9R0-30QLJ
onsemi
FDC2512
Infineon Technologies
BSS84PWH6327XTSA1
Panjit International Inc.
PJP18N20_T0_00001
GeneSiC Semiconductor
G3R160MT17D
Alpha & Omega Semiconductor Inc.
AOT27S60L
IXYS