FQB6N70TM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 700V 6.2A D2PAK
$2.25
Available to order
Reference Price (USD)
1+
$2.25000
500+
$2.2275
1000+
$2.205
1500+
$2.1825
2000+
$2.16
2500+
$2.1375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQB6N70TM from Fairchild Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Fairchild Semiconductor's FQB6N70TM for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 142W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STF28N65M2
Fairchild Semiconductor
FDD6632
STMicroelectronics
STB32NM50N
Diodes Incorporated
DMT12H090LFDF4-13
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJQ1216A-F1-1100HF
Infineon Technologies
IPD50N03S2L06ATMA1
STMicroelectronics
STB80NF10T4
Nexperia USA Inc.
PSMN014-80YLX
Taiwan Semiconductor Corporation
TSM7NC60CF C0G
Fairchild Semiconductor