FQD12N20LTM-F085
onsemi
onsemi
MOSFET N-CH 200V 9A DPAK
$0.56
Available to order
Reference Price (USD)
1+
$0.56302
500+
$0.5573898
1000+
$0.5517596
1500+
$0.5461294
2000+
$0.5404992
2500+
$0.534869
Exquisite packaging
Discount
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The FQD12N20LTM-F085 from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's FQD12N20LTM-F085 for their critical applications.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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