FQD3N60CTM-WS
onsemi
onsemi
MOSFET N-CH 600V 2.4A DPAK
$1.30
Available to order
Reference Price (USD)
2,500+
$0.43749
5,000+
$0.41683
12,500+
$0.40206
25,000+
$0.39992
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQD3N60CTM-WS from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's FQD3N60CTM-WS for their critical applications.
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Taiwan Semiconductor Corporation
TSM5NC50CP ROG
NXP USA Inc.
BUK7516-55A,127
STMicroelectronics
STW63N65DM2
onsemi
FDMC2523P
Infineon Technologies
BSZ520N15NS3GATMA1
onsemi
NTD5865NLT4G
Vishay Siliconix
SIHB23N60E-GE3
Nexperia USA Inc.
PSMN4R5-40BS,118
Diodes Incorporated
DMN1054UCB4-7
Vishay Siliconix