FQD4N25TM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 250V 3A DPAK
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
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The FQD4N25TM from Fairchild Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FQD4N25TM offers the precision and reliability you need. Trust Fairchild Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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