RF1S45N02L
Harris Corporation
Harris Corporation
45A, 20V, 0.022OHM, N-CHANNEL LO
$0.52
Available to order
Reference Price (USD)
1+
$0.52000
500+
$0.5148
1000+
$0.5096
1500+
$0.5044
2000+
$0.4992
2500+
$0.494
Exquisite packaging
Discount
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Optimize your power electronics with the RF1S45N02L single MOSFET from Harris Corporation. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RF1S45N02L combines cutting-edge technology with Harris Corporation's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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