FQD4P25TM-WS
onsemi
onsemi
MOSFET P-CH 250V 3.1A DPAK
$1.04
Available to order
Reference Price (USD)
2,500+
$0.38064
5,000+
$0.35579
12,500+
$0.34337
25,000+
$0.33659
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the FQD4P25TM-WS by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The FQD4P25TM-WS stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
RCX120N20
Renesas Electronics America Inc
2SJ243-T1-A
Fairchild Semiconductor
FQPF9N25CT
STMicroelectronics
STP12NM50FP
onsemi
NTMFS4H02NFT3G
Toshiba Semiconductor and Storage
TK10A80E,S4X
Rectron USA
RM8N650IP
Vishay Siliconix
SIHF9Z24STRR-GE3
Alpha & Omega Semiconductor Inc.
AOI7S65
Microchip Technology