FQP7N80
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 800V 6.6A TO220-3
$1.94
Available to order
Reference Price (USD)
1+
$1.94000
500+
$1.9206
1000+
$1.9012
1500+
$1.8818
2000+
$1.8624
2500+
$1.843
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQP7N80 from Fairchild Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Fairchild Semiconductor's FQP7N80 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SI3443BDV-T1-GE3
Infineon Technologies
IRF3610STRLPBF
STMicroelectronics
STW3N150
Diodes Incorporated
DMP510DL-7
Toshiba Semiconductor and Storage
TPH2R306NH1,LQ
Panjit International Inc.
PJA3419_R1_00001
Vishay Siliconix
SIR416DP-T1-GE3
Infineon Technologies
IPI320N20N3GAKSA1
Alpha & Omega Semiconductor Inc.
AO7415
onsemi