FQU3N50CTU
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 2
$0.42
Available to order
Reference Price (USD)
1+
$0.97000
10+
$0.85700
100+
$0.67700
500+
$0.52500
1,000+
$0.41448
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FQU3N50CTU by Fairchild Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Fairchild Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Alpha & Omega Semiconductor Inc.
AOB409L
Vishay Siliconix
SUP90220E-GE3
Microchip Technology
APT10026JFLL
Renesas Electronics America Inc
HAT1130RWS-E
Toshiba Semiconductor and Storage
TPN6R303NC,LQ
Rectron USA
RM7N600IP
Diodes Incorporated
DMN2025UFDF-13
Infineon Technologies
IPB022N04LG
STMicroelectronics
STS5N15F4
Nexperia USA Inc.